Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation
Identifieur interne : 001062 ( Main/Repository ); précédent : 001061; suivant : 001063Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation
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Abstract
Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥ 120 °C and the pressure of ∼50 bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. A method for the selective isolation of indium from the extractant solution and recycle of the chelant in solution is also described.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation</title><author><name sortKey="Hasegawa, Hiroshi" uniqKey="Hasegawa H">Hiroshi Hasegawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Science and Engineering, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation></author><author><name sortKey="Rahman, Ismail M M" uniqKey="Rahman I">Ismail M. M. Rahman</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Natural Science and Technology, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied and Environmental Chemistry, University of Chittagong Chittagong 4331</s1><s3>BGD</s3><sZ>2 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Department of Applied and Environmental Chemistry, University of Chittagong Chittagong 4331</wicri:noRegion></affiliation></author><author><name sortKey="Egawa, Yuji" uniqKey="Egawa Y">Yuji Egawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Natural Science and Technology, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation></author><author><name sortKey="Sawai, Hikaru" uniqKey="Sawai H">Hikaru Sawai</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Natural Science and Technology, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation></author><author><name sortKey="Begum, Zinnat A" uniqKey="Begum Z">Zinnat A. Begum</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Natural Science and Technology, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation></author><author><name sortKey="Maki, Teruya" uniqKey="Maki T">Teruya Maki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Science and Engineering, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kakuma, Kanazawa 920-1192</wicri:noRegion></affiliation></author><author><name sortKey="Mizutani, Satoshi" uniqKey="Mizutani S">Satoshi Mizutani</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Graduate School of Engineering, Osaka City University, Sugimoto 3-3-138</s1><s2>Sumiyoshi-Ku, Osaka 558-8585</s2><s3>JPN</s3><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Sumiyoshi-Ku, Osaka 558-8585</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0259237</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0259237 INIST</idno><idno type="RBID">Pascal:13-0259237</idno><idno type="wicri:Area/Main/Corpus">000955</idno><idno type="wicri:Area/Main/Repository">001062</idno></publicationStmt><seriesStmt><idno type="ISSN">0304-3894</idno><title level="j" type="abbreviated">J. hazard. mater. : (Print)</title><title level="j" type="main">Journal of hazardous materials : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Decontamination</term><term>EDTA</term><term>Electronic scrap</term><term>Indium</term><term>Indium oxide</term><term>Liquid crystal displays</term><term>Microwave</term><term>Microwave irradiation</term><term>Tin oxide</term><term>Waste treatment</term><term>pH</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Décontamination</term><term>Irradiation hyperfréquence</term><term>EDTA</term><term>pH</term><term>Hyperfréquence</term><term>Affichage cristaux liquides</term><term>Traitement déchet</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Indium</term><term>4279K</term><term>Déchet électronique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Déchet électronique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥ 120 °C and the pressure of ∼50 bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. A method for the selective isolation of indium from the extractant solution and recycle of the chelant in solution is also described.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0304-3894</s0></fA01><fA02 i1="01"><s0>JHMAD9</s0></fA02><fA03 i2="1"><s0>J. hazard. mater. : (Print)</s0></fA03><fA05><s2>254-55</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation</s1></fA08><fA11 i1="01" i2="1"><s1>HASEGAWA (Hiroshi)</s1></fA11><fA11 i1="02" i2="1"><s1>RAHMAN (Ismail M. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>EGAWA (Yuji)</s1></fA11><fA11 i1="04" i2="1"><s1>SAWAI (Hikaru)</s1></fA11><fA11 i1="05" i2="1"><s1>BEGUM (Zinnat A.)</s1></fA11><fA11 i1="06" i2="1"><s1>MAKI (Teruya)</s1></fA11><fA11 i1="07" i2="1"><s1>MIZUTANI (Satoshi)</s1></fA11><fA14 i1="01"><s1>Institute of Science and Engineering, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Graduate School of Natural Science and Technology, Kanazawa University</s1><s2>Kakuma, Kanazawa 920-1192</s2><s3>JPN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Applied and Environmental Chemistry, University of Chittagong Chittagong 4331</s1><s3>BGD</s3><sZ>2 aut.</sZ></fA14><fA14 i1="04"><s1>Graduate School of Engineering, Osaka City University, Sugimoto 3-3-138</s1><s2>Sumiyoshi-Ku, Osaka 558-8585</s2><s3>JPN</s3><sZ>7 aut.</sZ></fA14><fA20><s1>10-17</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15708</s2><s5>354000503055570020</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>48 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0259237</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of hazardous materials : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥ 120 °C and the pressure of ∼50 bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. 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